Method for slicing a semiconductor silicon single crystal

Details Method for slicing a semiconductor silicon single crystal Method for slicing a semiconductor silicon single crystal

1991-09-09

1993-01-19

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156645, 156638, 156662, 156625, 2041291, H01L 2100

Patent

active

051804697

ABSTRACT:
A single crystal of semiconductor silicon can be sliced into wafers not by the conventional mechanical means but by a novel chemical means so that advantages are obtained in the reduced material loss by cutting and in the absence of any mechanically stressed layer in the surface of the wafer as sliced. The method comprises conducting electrolysis of an aqueous solution containing sulfuric and hydrofluoric acids with a fine platinum wire as the anode to evolve oxygen containing ozone on the anode surface while a single crystal of silicion is held in proximity to the wire anode so that the nascent oxygen formed from the ozone oxidizes silicon into silicon dioxide which as formed is dissolved away in the acidic medium to leave a groove in the single crystal. When the wire anode or the single crystal is continuously moved to keep a small distance between the wire anode and the groove bottom, the whole single crystal body is cut through to form a wafer.

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