Method for simultaneously tensile and compressive straining...

Details Method for simultaneously tensile and compressive straining... Method for simultaneously tensile and compressive straining...

2011-05-31

2011-05-31

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S196000, C438S412000, C438S489000, C257SE21546

Reexamination Certificate

active

07951659

ABSTRACT:
A method of forming a microelectronic device comprising, on a same support: at least one semi-conductor zone strained according to a first strain, and at least one semi-conductor zone strained according to a second strain, different to the first strain, comprising: the formation of semi-conductor zones above a pre-strained layer, then trenches extending through the thickness of the pre-strained layer, the dimensions and the layout of the semi-conductor zones as a function of the layout and the dimensions of the trenches being so as to obtain semi-conductor zones having a strain of the same type as that of the pre-strained layer and semi-conductor zones having a strain of a different type to that of the pre-strained layer.

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