Method for simultaneously fabricating salicide and self-aligned

Details Method for simultaneously fabricating salicide and self-aligned Method for simultaneously fabricating salicide and self-aligned

1996-10-30

1999-07-13

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438655, 438656, 438683, H01L 2128

Patent

active

059240105

ABSTRACT:
A method of fabricating salicide and self-aligned barrier simultaneously is disclosed. The initial steps include sputtering a metal stack (Ti--TiN--Ti) and forming a salicide layer by thermally reacting the metal stack and the wafer followed by a chemical etching which removes the unreacted portions of the metal stack. The portions of the metal stack on Si can react with Si to form a TiSi.sub.2 layer, thus forming TiSi.sub.2 --TiN--TiSi.sub.2. The TiSi.sub.2 layer over the TiN layer acts as a mask in the chemical etching and protects the TiN layer from been etched. The diffusion barrier layer is thus formed simultaneously within the fabricating of salicide.

REFERENCES:
patent: 5162262 (1992-11-01), Ajika et al.
patent: 5240880 (1993-08-01), Hindman et al.
patent: 5242860 (1993-09-01), Nulman et al.
patent: 5451545 (1995-09-01), Ramaswami et al.
Wolf, S., Silicon Processing for the VLSI Era, vol. 2, 1990, Lattice Press, pp. 121-128, 143-152.
Wolf, S., Silicon Processing for the VLSI Era, vol. 1, 1986, Lattice Press, pp. 514-520.

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