Method for simultaneously fabricating bipolar and complementary

Fishing – trapping – and vermin destroying

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437 34, 437 57, 437 26, 437985, 357 43, H01L 21331

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active

050231936

ABSTRACT:
A process is disclosed for simultaneously fabricating bipolar and complementary field effect transistors. The process includes the fabrication of buried layers 18 doped with both phosphorus and arsenic to permit a shorter diffusion time while simultaneously providing buried layers having low resistance and high diffusivity. The process enables fabrication of BiCMOS structures using only six masks prior to the contact mask.

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Ghandhi, S., #VLSI Fabrication Principles, John Wiley & Son, 1983, pp. 576-583.

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