Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2007-02-27
2007-02-27
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C977S701000
Reexamination Certificate
active
10966976
ABSTRACT:
A method of simultaneously fabricating at least two semiconductor devices, at least one of which is a nanocrystal memory and at least one of which is a non-nonocrystal semiconductor device. A nanocrystal layer is formed over an oxide layer of the at least two semiconductor devices being fabricated. The nanocrystal layer is removed from at least one portion of the substrate corresponding to the at least one non-nanocrystal device being fabricated. A polycrystalline gate is formed for each of the semiconductor devices being fabricated. Doping is provided to provide the source and drain regions for each of the semiconductor devices being fabricated. The substrate is thermally treated after the doping. The thermal budget of the fabrication process is not limited by this thermal treatment.
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Atmel Corporation
Coleman W. David
Schneck Thomas
Schneck & Schneck
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