Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Reexamination Certificate
2011-06-07
2011-06-07
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
C438S014000, C438S015000
Reexamination Certificate
active
07955877
ABSTRACT:
Testing a non volatile memory by exposing the non volatile memory to particle radiation (e.g. xenon ions) to emulate memory cell damage due to data state changing events of a non volatile memory cell. After the exposing, the memory cells are subjected to tests and the results of the tests are used to develop reliability indications of the non volatile memory. Integrated circuits with non volatile memories of the same design are provided. Reliability representations of the integrated circuits can be made with respect to a number of data state charging events based on the exposure and subsequent tests.
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Chang Ko-Min
Kuhn Peter J.
Prinz Erwin J.
Suhail Mohammed
Clingan, Jr. James L.
Dolezal David G.
Freescale Semiconductor Inc.
Jung Michael
Richards N Drew
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