Electrical resistors – With base extending along resistance element – Resistance element and/or terminals printed or marked on base
Patent
1995-07-26
1996-06-25
Walberg, Teresa J.
Electrical resistors
With base extending along resistance element
Resistance element and/or terminals printed or marked on base
338308, 338254, 338314, 437 10, 437918, H01C 1012
Patent
active
055304184
ABSTRACT:
A polysilicon resistor structure and a method by which the polysilicon resistor structure may be formed. A polysilicon resistor is formed upon the surface of a semiconductor substrate. A pair of dummy polysilicon layers is formed along opposite edges and separated from the polysilicon resistor. A pair of metal sidewalls is then formed upon the upper surfaces of the pair of dummy polysilicon layers, and a top metal layer is formed bridging the upper surfaces of the pair of metal sidewalls. The pair of dummy polysilicon layers, the pair of metal sidewalls and the top metal layer form an open ended cavity upon the semiconductor substrate within which structure the polysilicon resistor resides. The polysilicon resistor is separated from the structure by an insulating material which is not susceptible to outgassing of hydrogen.
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Nakabayashi et al, "Influence of Hydrogen on Electrical Characteristics of Poly-Si Resistor" 32 Japan of Applied Physics, Pt. 1, No. 9A, 3734 (1993).
Hsu Shun-Liang
Lin Mou-Shiung
Tseng Han-Liang
Easthom Karl
Saile George O.
Szecsy Alek P.
Taiwan Semiconductor Manufacturing Company
Walberg Teresa J.
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