Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-04
2010-06-08
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S614000, C438S620000, C438S622000
Reexamination Certificate
active
07732321
ABSTRACT:
A method for adding an additional layer to an integrated circuit, the method including providing an integrated circuit having an interconnect layer, depositing, over substantially all of an exposed surface of the integrated circuit, an additional layer of material whose conductivity can be altered, and selectively altering the conductivity of a first portion of the additional layer by selective annealing, to produce a sub-circuit in the additional layer, the sub-circuit being in operative electrical communication with the integrated circuit. Related apparatus and methods are also described.
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Jul. 1, 2009 Office Communication in connection with prosecution of EP 05 740 533.4 (4 pages).
Husch Blackwell Sanders LLP Welsh & Katz
Le Dung A.
NDS Limited
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