Method for shallow dopant distribution

Details Method for shallow dopant distribution Method for shallow dopant distribution

2006-09-11

2009-11-24

Andújar, Leonardo (Department: 2893)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ordering or disordering

C438S528000, C438S530000

Reexamination Certificate

active

07622372

ABSTRACT:
Vacancies and dopant ions are introduced near the surface of a semiconductor layer structure. Implanted dopant ions which diffuse by an interstitialcy mechanism have diffusivity greatly reduced, which leads to a very low resistivity doped region and a very shallow junction.

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