Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2006-09-12
2006-09-12
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S289000, C438S766000
Reexamination Certificate
active
07105427
ABSTRACT:
Vacancies and dopant ions are introduced near the surface of a semiconductor wafer. The dopant ions which diffuse by an interstitialcy mechanism have diffusivity greatly reduced, which leads to a very low resistivity doped region and a very shallow junction.
REFERENCES:
patent: 5861632 (1999-01-01), Rohner
patent: 6159856 (2000-12-01), Nagano
Chu Wei-Kan
Liu Jiarui
Lu Xinming
Shao Lin
Wang Xuemei
Chu Wei Kan
Hodgson Rodney T
Perkins Pamela E
Smith Zandra V.
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