Method for separating sapphire wafer into chips

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices

Reexamination Certificate

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Details

C438S462000, C430S313000, C430S323000

Reexamination Certificate

active

07074652

ABSTRACT:
Disclosed is a method for efficiently separating a sapphire wafer serving as a substrate, on which semiconductor elements are formed, into unit chips by scribing the sapphire wafer, after grinding and lapping a rear surface of the sapphire wafer and then sand-blasting the sapphire wafer. The method includes the steps of: (a) grinding a rear surface of the sapphire wafer so that the sapphire wafer has a designated thickness; (b) lapping the rear surface of the ground sapphire wafer so that the sapphire wafer has a designated thickness; (c) polishing the rear surface of the lapped sapphire wafer so that the sapphire wafer has a designated thickness; (d) sand-blasting the rear surface of the polished sapphire wafer by uniformly blasting particles at a designated pressure during a designated time onto the rear surface of the polished sapphire wafer; and (e) scribing the rear surface of the sand-blast ground sapphire wafer.

REFERENCES:
patent: 5759087 (1998-06-01), Masumura et al.
patent: 6465158 (2002-10-01), Sekiya
patent: 6593170 (2003-07-01), Tateiwa et al.
patent: 2003/0008510 (2003-01-01), Grigg et al.
patent: 10166259 (1998-06-01), None
patent: 2000-331965 (2000-11-01), None
patent: 1999-001788 (1999-01-01), None

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