Method for sensing data in a magnetoresistive memory using large

Details Method for sensing data in a magnetoresistive memory using large Method for sensing data in a magnetoresistive memory using large

1992-09-24

1995-05-30

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365173, G11C 1115

Patent

active

054208190

ABSTRACT:
A digital memory having a plurality of locations where selectively coincident currents can be selected to flow in a pair of wordline structures, or with a wordline structure paired with a composite line structure (and possibly a bit line structure), to continue an existing, or switch to an opposite, edge magnetization state in a composite line structure or, alternatively, continue or switch a magnetization state in a storage film cell used to magnetically bias such a composite line structure.

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