Method for sensing bit line with uniform sensing margin time...

Details Method for sensing bit line with uniform sensing margin time... Method for sensing bit line with uniform sensing margin time...

2006-02-07

2006-02-07

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

C365S207000

Reexamination Certificate

active

06996018

ABSTRACT:
A semiconductor memory device having a uniform bit line sensing margin time independent on an external voltage variation, includes: a memory cell coupled to a bit line and a word line; an amplifier for amplifying an electric potential of the bit line; a first control signal generator to which an external voltage is supplied for activating the word line; and a second control signal generator to which a core voltage is supplied for controlling an execution of the amplifier by receiving the first control signal.

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