Method for semiconductor ribbon-to-ribbon conversion

Details Method for semiconductor ribbon-to-ribbon conversion Method for semiconductor ribbon-to-ribbon conversion

1983-06-23

1985-04-09

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

C30B 1306

Patent

active

045100152

ABSTRACT:
A method is provided for semiconductor ribbon-to-ribbon conversion in a rigid edge mode. A combination carrier and mask is provided by which the ribbon is secured during the conversion process. The carrier holds the ribbon and simultaneously masks the edges of the ribbon from the heating effects of an impinging energy beam. The energy beam, such as a laser or electron beam, impinges on the ribbon and creates a molten zone which extends through the thickness of the ribbon. During the growth process, the molten zone is caused to move along the length of the ribbon. The mask prevents melting of the extreme edge portions of the ribbon and thus allows a rapid growth rate and a stable molten zone without sophisticated electronic equipment to gate the energy beam at the ribbon edges.

REFERENCES:
patent: 4120743 (1978-10-01), Baghdadi et al.
patent: 4199397 (1980-04-01), Gurtler
patent: 4325777 (1982-04-01), Yarwood et al.
Baghdadi et al., Jl. of Crystal Growth 50, (1980), pp. 236-246.

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