Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1990-10-02
1992-12-22
Hearn, Brian E.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156662, 156653, 156655, 156657, H01L 2100
Patent
active
051731525
ABSTRACT:
A method for selectively removing a desired insulating film from a wafer surface. The method includes the steps of: preparing vapor containing hydrogen fluoride and water; keeping the temperature of the wafer surface higher than the temperature of the vapor by a prescribed temperature difference range; and supplying the vapor to the wafer surface. Due to the difference in responsiveness caused by the temperature difference, only the desired film, for example, the native silicon oxide film formed on a silicon layer surface, is selectively etched and removed by the hydrogen fluoride. It is not necessary to extremely reduce the water content in the reaction system, or to accurately regulate the concentration of the hydrogen fluoride gas.
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Dainippon Screen Mfg. Co,. Ltd.
Goudreau George
Hearn Brian E.
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