Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-02-22
2011-02-22
Smith, Matthew S (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21477
Reexamination Certificate
active
07892975
ABSTRACT:
A method for selectively forming an electric conductor, the method including disposing a processing target and a metal compound in an atmosphere including a supercritical fluid, the processing target having formed thereon at least one recess for providing an electric conductor, the metal compound including a metal serving as a main component of the electric conductor, and dissolving at least part of the metal compound in the supercritical fluid, selectively introducing the metal compound dissolved in the supercritical fluid into the recess in contact with a surface of the processing target, and coagulating in the recess the metal compound introduced into the recess to precipitate the metal from the metal compound, and coagulating the metal precipitated in the recess, thereby providing the electric conductor in the recess.
REFERENCES:
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patent: 2006/0189071 (2006-08-01), Grant
patent: 2006/0223312 (2006-10-01), Yonker et al.
patent: 2008/0032503 (2008-02-01), Thompson
Claims filed Aug. 27, 2007 in U.S. Appl. No. 11/845,615.
Kondoh, E., “Semiconductor Downsizing Processing Using Supercritical CO2,” Clean Technology, Japan Industrial Publishing Co., Ltd., Jun. 2004, pp. 55-58.
Kobayashi, Y., “Back-End Process Technology for 45 nm,” Semiconductor FPD World, Aug. 2004, pp. 44-47.
Hirose Michiru
Kondoh Eiichi
Satoh Masayuki
Tanaka Hitoshi
Yano Hisashi
Christensen O'Connor Johnson & Kindness PLLC
Semiconductor Technology Academic Research Center
Shook Daniel
Smith Matthew S
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