Method for selectively etching the materials of a composite of t

Details Method for selectively etching the materials of a composite of t Method for selectively etching the materials of a composite of t

1988-12-16

1989-09-26

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 1566591, 156668, 20419233, 20419236, B44C 122, C03C 1500, C03C 2506, B29C 3700

Patent

active

048697770

ABSTRACT:
A method of etching in an O.sub.2 microwave plasma is provided which has a predetermined selectivity between a composite of two materials such as a photoresist and a polyimide is provided. The etch rate of each of the materials is measured at various temperatures and pressures, and this composite is then etched at a selected temperature and pressure which will provide the desired degree of selectivity.

REFERENCES:
patent: 4092210 (1978-05-01), Hoepfner
patent: 4341592 (1982-07-01), Shortes et al.
patent: 4417947 (1983-11-01), Pan
patent: 4462863 (1984-07-01), Nishimatsu et al.
patent: 4512868 (1985-04-01), Fujimura et al.
patent: 4576692 (1986-03-01), Fukuta et al.
patent: 4673456 (1987-06-01), Spencer et al.
patent: 4718974 (1988-01-01), Minaee et al.
patent: 4718976 (1988-01-01), Fujimura et al.
patent: 4738748 (1988-04-01), Kisa et al.

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