Method for selectively etching polysilicon to gate oxide using a

Details Method for selectively etching polysilicon to gate oxide using a Method for selectively etching polysilicon to gate oxide using a

1992-12-23

1994-09-13

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156662, 156657, 1566611, 156653, H01L 2100

Patent

active

053465865

ABSTRACT:
In semiconductor manufacture, a method of etching a polysilicon layer to a gate oxide in a semiconductor structure is provided. The method is performed insitu in a plasma etch chamber. Initially, an oxide hard mask is formed on the semiconductor structure by etching a deposited oxide layer through a photoresist mask. The photoresist mask is then stripped in the same etch chamber using a high pressure ozone plasma. With the photoresist mask stripped from the semiconductor structure, the polysilicon layer can be etched through the oxide hard mask to the gate oxide with a high etch selectivity.

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"Very High Sective n/supt/poly-Si Rie with Carbon Elimination"; J. Appl Phys. 2, Lett; Nakamura et. al.; vol. 28; No. 10; 1989.

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