Method for selectively etching organosilicate glass with...

Details Method for selectively etching organosilicate glass with... Method for selectively etching organosilicate glass with...

2006-05-09

2006-05-09

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

Etching inorganic substrate

C216S041000, C216S058000, C438S691000, C438S706000, C438S740000

Reexamination Certificate

active

07041230

ABSTRACT:
A semiconductor chip formed on a substrate is provided. An oxygen-doped silicon carbide etch stop layer is formed over the substrate. An organosilicate glass layer is formed over the oxygen-doped silicon carbide etch stop layer. A feature is selectively etched in the organosilicate glass layer using an etch with an organosilicate glass to oxygen-doped silicon carbide selectivity greater than 5:1.

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U.S. Appl. No. 10/215,757, filed Aug. 9, 2002.

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