Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1992-11-25
1995-01-10
Breneman, R. Bruce
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156646, 156654, 437225, 437228, H01L 2100, H01L 2102, H01L 21306, B44C 122
Patent
active
053803981
ABSTRACT:
A method for semiconductor device fabrication that uses a mixture of SiCl.sub.4, CF.sub.4, O.sub.2, and He to selectively etch GaAs with respect to AlGaAs. Etch selectivities greater than 300:1 are obtained.
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patent: 5043776 (1991-08-01), Hida
J. Vac. Sci. Technol., B9(6), Nov./Dec. 1991, "Selective Reactive Ion Etching and GaAs/AlGaAs Metal-Semiconductor Field," by Cameron et al., pp. 3538-3541.
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Japanese Journal of Applied Physics, vol. 20, No. 11, Nov. 1981, "Selective Dry Etching of AlGaAs-GaAS Heterojunction," by Hikosaka, et al., pp. L847-L850.
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Solid State Technology, Nov. 1988, "Plasma Etching for III-V Compound Devices," by D. E. Ibbotson et al., pp. 105-108, 137-138.
Ibbotson, Plasma Etching for III-V Compound Devices, Part II, Solid State Tech., Nov. 1988, pp. 105-108.
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Asakawa, GaAs and GaAlAs Equi-Rate Etching Using a New Reactive Ion Beam Etching System, Jap. Jour. of Appl. Phys., vol. 22, No. 10, Oct. 1983, pp. L653-L655.
AT&T Bell Laboratories
Breneman R. Bruce
Everhart B.
Laumann Richard D.
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