Method for selective removal of organometallic and organosilicon

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156662, 156664, 156665, 156653, 252 791, 252 792, 252 793, 252 794, H01L 2100

Patent

active

053207092

ABSTRACT:
A method for selectively removing oxidized organometallic residues, oxidized organosilicon residues, native oxides, and damaged oxides created in plasma-etching through emersion of plasma-etched silicon wafers in a solution of anhydrous ammonium fluoride and a polyhydric alcohol, which is substantially free of hydrogen fluoride and water.

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