Method for selective removal of high-k material

Details Method for selective removal of high-k material Method for selective removal of high-k material

2006-11-07

2006-11-07

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S745000, C438S750000, C252S079100

Reexamination Certificate

active

07132370

ABSTRACT:
The present invention relates to a method for selectively removing a high-k material comprising providing a high-k material on a semiconductor substrate, and contacting the high-k material with a solution comprising HF, an organic compound, and an inorganic acid.

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