Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1993-06-09
1995-06-20
Breneman, R. Bruce
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
437 67, 437 72, 437 78, B44C 122
Patent
active
054258456
ABSTRACT:
After trench formation on a semiconductor wafer (14) using a hard trench mask containing a phosphosilicate glass top layer and an underlying thermal oxide layer, the phosphosilicate glass layer may be removed without substantially etching the thermal oxide layer. The wafer temperature is increased to at least 40.degree. C. (36) prior to etching with an HF/H.sub.2 O vapor (40-44).
REFERENCES:
patent: 5047815 (1991-09-01), Yasuhira
patent: 5173152 (1992-12-01), Tanaka
patent: 5231046 (1993-07-01), Tasaka
S. Wolf and R. N. Tauber, "Silicon Processing for the VLSI Era" vol. 1-Process Technology, Lattice Press, 1986, pp. 523-527 and 567.
B. E.Deal, M. A. McNeilly, D. B. Kao and J. M. deLarios, "Vapor-Phase Wafer Cleaning, Oxide Etching and Thin Film Growth", Presented at 1st Intl. Symposium on Cleaning Technology in Semiconductor Device Mfg. Fall Meeting, The Electrochem. Soc. in Hollywood, Fla. Oct./1989.
Man Wong, M. M. Moslehi and R. A. Bowling, "Wafer Temperature Dependence of the Vapor-Phase HF Oxide Etch", J. Electrochem. Soc., vol. 140, No. 1, pp. 205-208, Jan. 1990.
M. Wong, M. M. Moslehi and D. W. Reed, "Characterization of Wafer Cleaning and Oxide Etching Using Vapor-Phase Hydrogen Flouride", J. Electrochem. Soc., vol. 136, No. 6, pp. 1799-1802, Jun. 1991.
M. Wong, D. K. Y. Liu, M. M. Moslehi and D. W. Reed, "Preoxidation Treatment Using HCl/HF Vapor", IEEE Electron Device Letters, vol. 12, No. 8, pp. 425, 426, Aug. 1991.
Breneman R. Bruce
Chang Joni Y.
Donaldson Richard L.
Garner Jacquleine J.
Hiller William E.
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