Method for selective laser crystallization and display panel...

Details Method for selective laser crystallization and display panel... Method for selective laser crystallization and display panel...

2007-11-30

2009-10-27

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S482000, C438S486000

Reexamination Certificate

active

07608529

ABSTRACT:
A display panel comprises a substrate having a displaying region (such as active organic light emitting region) and a circuit driving region; and a polysilicon layer formed on the substrate and having a first polysilicon portion and a second polysilicon portion respectively corresponding to the displaying region and circuit driving region, wherein the grain size of the second polysilicon portion crystallized by continuous wave (CW) laser annealing method is larger than that of the first polysilicon portion crystallized by excimer laser annealing (ELA) method.

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