Method for selective etching of anitreflective coatings

Details Method for selective etching of anitreflective coatings Method for selective etching of anitreflective coatings

1998-03-13

1999-11-09

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438756, 438757, H01L 2100

Patent

active

059814012

ABSTRACT:
The present invention relates to the fabrication of integrated circuit devices, and more particularly, to a method of etching inorganic antireflective layers without etching excessive amounts of an underlying oxide. According to one aspect of the present invention, the antireflective layer is selectively etched using an etchant which comprises about 35-40 wt. % NH.sub.4 F and about 0.9-5.0 wt. % H.sub.3 PO.sub.4 in an aqueous solution.

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