Method for selective deposition of a thin self-assembled...

Details Method for selective deposition of a thin self-assembled... Method for selective deposition of a thin self-assembled...

2005-12-07

2008-05-06

Malsawma, Lex (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21584

Reexamination Certificate

active

07368377

ABSTRACT:
A method for selective deposition of self-assembled monolayers to the surface of a substrate for use as a diffusion barrier layer in interconnect structures is provided comprising the steps of depositing a first self-assembled monolayer to said surface, depositing a second self-assembled monolayer to the non-covered parts of said surface and subsequently heating said substrate to remove the first self-assembled monolayer. The method of selective deposition of self-assembled monolayers is applied for the use as diffusion barrier layers in a (dual) damascene structure for integrated circuits.

REFERENCES:
patent: 6348240 (2002-02-01), Calvert et al.
patent: 6518168 (2003-02-01), Clem et al.
patent: 6919636 (2005-07-01), Ryan
patent: 7138333 (2006-11-01), Schmidt et al.
patent: 2002/0079487 (2002-06-01), Ramanath et al.

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