Method for rounding bottom corners of trench and shallow...

Details Method for rounding bottom corners of trench and shallow... Method for rounding bottom corners of trench and shallow...

2007-12-18

2007-12-18

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

C438S700000, C438S719000, C216S017000, C216S039000, C216S067000, C216S079000

Reexamination Certificate

active

10997507

ABSTRACT:
A method for rounding the bottom corners of a trench is described. In the method, an etching process is performed using a fluorocarbon compound with at least two carbon atoms, He and O2as an etching gas to round the bottom corners of the trench.

REFERENCES:
patent: 4729815 (1988-03-01), Leung
patent: 5423941 (1995-06-01), Komura et al.
patent: 5843226 (1998-12-01), Zhao et al.
patent: 5933748 (1999-08-01), Chou et al.
patent: 6008131 (1999-12-01), Chen
patent: 6191043 (2001-02-01), McReynolds
patent: 6235643 (2001-05-01), Mui et al.
patent: 6318384 (2001-11-01), Khan et al.
patent: 6544860 (2003-04-01), Singh
patent: 6677242 (2004-01-01), Liu et al.
patent: 6746961 (2004-06-01), Ni et al.
patent: 6890859 (2005-05-01), Bamnolker et al.
patent: 6921724 (2005-07-01), Kamp et al.
patent: 05-226298 (1993-03-01), None
Seki Tetsuya (JP 05-226298), Apr. 1993, Translation.

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