Method for roughening semiconductor surface

Details Method for roughening semiconductor surface Method for roughening semiconductor surface

2005-04-26

2005-04-26

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S712000, C438S720000

Reexamination Certificate

active

06884647

ABSTRACT:
In order to provide a method for easily roughening a surface of a semiconductor constituting an LED, a first material18and a second material20having a property that they are nonuniformly mixed when thermally treated are deposited on a semiconductor16,the structure is thermally treated, and etching is performed through reactive ion etching in which the etching rate with respect to the first material18is slower than the etching rates with respect to the second material20and to the semiconductor16.During this process, a region22in which the first material18is the primary constituent functions as an etching mask, and a predetermined roughness can be easily formed on the surface of the semiconductor16.

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