Method for revealing emergent dislocations in a...

Details Method for revealing emergent dislocations in a... Method for revealing emergent dislocations in a...

2011-08-23

2011-08-23

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C257SE21111

Reexamination Certificate

active

08003550

ABSTRACT:
The invention relates to a method for detecting defects, more particularly emergent dislocations of an element having at least one crystalline germanium-base superficial layer. The method comprises an annealing step of the element in an atmosphere having a base that is a mixture of at least an oxidizing gas and a neutral gas enabling selective oxidizing of the emergent dislocations of the crystalline germanium-base superficial layer.

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patent: 7531427 (2009-05-01), Daval
patent: 2007/0254440 (2007-11-01), Daval
patent: 2009/0309118 (2009-12-01), Song
patent: 1 758 158 (2007-02-01), None
patent: WO 2005/086222 (2005-09-01), None
Souriau, L., et al; “A Wet Technique to Reveal Threading Dislocations in Thin Germanium Layers,” Solid State Phenomena Scitec Publications Ltd. Switzerland, Jan. 1, 2008, vol. 134, No. xp0081009913, pp. 83-86.
French Search Report for French Patent Application No. 09 00198 dated Aug. 17,2009 (w/ Eng. Translation).

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