Method for reuse of wafers for growth of vertically-aligned...

Details Method for reuse of wafers for growth of vertically-aligned... Method for reuse of wafers for growth of vertically-aligned...

2011-03-22

2011-03-22

Thai, Luan C (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S503000, C438S962000, C257SE21090

Reexamination Certificate

active

07910461

ABSTRACT:
Reusing a Si wafer for the formation of wire arrays by transferring the wire arrays to a polymer matrix, reusing a patterned oxide for several array growths, and finally polishing and reoxidizing the wafer surface and reapplying the patterned oxide.

REFERENCES:
patent: 5314569 (1994-05-01), Pribat
patent: 5336558 (1994-08-01), Debe
patent: 5352651 (1994-10-01), Debe
patent: 5976957 (1999-11-01), Westwater et al.
patent: 6306734 (2001-10-01), Givargizov
patent: 6649824 (2003-11-01), Den
patent: 7057881 (2006-06-01), Chew et al.
patent: 7105428 (2006-09-01), Pan et al.
patent: 7109517 (2006-09-01), Zaidi
patent: 7116546 (2006-10-01), Chew
patent: 7238594 (2007-07-01), Fenash et al.
patent: 7253442 (2007-08-01), Huang
patent: 7309620 (2007-12-01), Fonash et al.
patent: 7335259 (2008-02-01), Hanrath et al.
patent: 7560366 (2009-07-01), Romano et al.
patent: 7666708 (2010-02-01), Lieber et al.
patent: 2002/0172820 (2002-11-01), Majumdar et al.
patent: 2005/0253138 (2005-11-01), Choi et al.
patent: 2005/0279274 (2005-12-01), Niu et al.
patent: 2006/0118791 (2006-06-01), Leu
patent: 2006/0207647 (2006-09-01), Tsakalakos et al.
patent: 2007/0122313 (2007-05-01), Li et al.
patent: 2007/0166899 (2007-07-01), Yao et al.
patent: 2007/0278476 (2007-12-01), Black
patent: 2008/0047604 (2008-02-01), Korevaar et al.
patent: 2008/0075954 (2008-03-01), Wardle et al.
patent: 2008/0110486 (2008-05-01), Tsakalakos et al.
patent: 2008/0134089 (2008-06-01), Tsakalakos et al.
patent: 2008/0169017 (2008-07-01), Korevaar et al.
patent: 2008/0315430 (2008-12-01), Weber et al.
patent: 2009/0020150 (2009-01-01), Atwater et al.
patent: 2009/0020853 (2009-01-01), Kayes et al.
patent: 2009/0050204 (2009-02-01), Habib
patent: 2009/0057839 (2009-03-01), Lewis et al.
patent: 2009/0127540 (2009-05-01), Taylor
patent: 2009/0152527 (2009-06-01), Lee et al.
patent: 2009/0266411 (2009-10-01), Habib et al.
patent: 1669920 (2005-09-01), None
patent: 1808688 (2006-07-01), None
patent: 11-214720 (1999-08-01), None
patent: 2005-194609 (2005-07-01), None
patent: 2005-310388 (2005-11-01), None
patent: 10-2007-18457 (2007-02-01), None
patent: 03/005450 (2003-01-01), None
patent: 2006/138671 (2006-12-01), None
patent: 2008/135905 (2008-11-01), None
PCT Search Report for PCT/US2008/070495 in the name of California Institute of Technology filed on Jul. 18, 2008.
PCT Written Opinion for PCT/US2008/070495 in the name of California Institute of Technology filed on Jul. 18, 2008.
PCT Search Report for PCT/US2008/070523 in the name of California Institute of Technology filed on Jul. 18, 2008.
PCT Written Opinion for PCT/US2008/070523 in the name of California Institute of Technology filed on Jul. 18, 2008.
PCT Search Report for PCT/US2008/070509 in the name of California Institute of Technology filed on Jul. 18, 2008.
PCT Written Opinion for PCT/US2008/070509 in the name of California Institute of Technology filed on Jul. 18, 2008.
PCT Search Report for PCT/US2008/070518 in the name of California Institute of Technology filed on Jul. 18, 2008.
PCT Written Opinion for PCT/US2008/070518 in the name of California Institute of Technology filed on Jul. 18, 2008.
Sze, S. M.Physics of Semiconductor Devices, 2 ed.; John Wiley & Sons, New York, 1981.
Kayes, B. M.; Atwater, H. A.; Lewis, N. S.J. Appl. Phys.2005, 97, 114302.
Fan, H. J.; Werner, P.; Zacharias, M.Small2006, 2, 700-717.
Lombardi, I.; Hochbaum, A. I.; Yang, P.; Carraro, C.; Maboudian, R.Chem. Mater.2006, 18, 988-991.
Huang, Z. P.; Fang, H.; Zhu, J.AdV. Mater.2007, 19, 744-748.
Peng, K.; Xu, Y.; Wu, Y.; Yan, Y.; Lee, S.-T.; Zhu, J.Small2005, 1,1062-1067.
Huynh, W. U.; Dittmer, J. J.; Alivisatos, A. P.Science2002, 295, 2425-2427.
Lin, Y. T.; Zeng, T. W.; Lai, W. Z.; Chen, C. W.; Lin, Y. Y.; Chang, Y.S.; Su, W. F.Nanotechnology2006, 17, 5781-5785.
Law, M.; Greene, L. E.; Johnson, J. C.; Saykally, R.; Yang, P. D.Nat. Mater.2005, 4, 455-459.
Wagner, R. S.; Ellis, W. C.Trans. Metallurg. Soc. AIME1965, 233, 1053.
Kayes, B. M.; Filler, M. A.; Putnam, M. C.; Kelzenberg, M. D.; Lewis, N. S.; Atwater, H. A.Appl. Phys. Lett.2007, 91, 103110.
Westwater, J.; Gosain, D. P.; Usui, S.Jpn. J. Appl. Phys. Part 11997, 36, 6204-6209.
Woodruff, J. H.; Ratchford, J. B.; Goldthorpe, I. A.; McIntyre, P. C.; Chidsey, C. E. D.Nano Lett.2007, 7, 1637-1642.
Struthers, J. D.J. Appl. Phys.1956, 27, 1560-1560.
Gibbons, J. F.; Cogan, G. W.; Gronet, C. M.; Lewis, N. S.Appl. Phys. Lett.1984, 45, 1095-1097.
Gronet, C. M.; Lewis, N. S.; Cogan, G. W.; Gibbons, J. F.Proc. Natl. Acad. Sci. U.S.A.1983, 80, 1152-1156.
Rosenbluth, M. L.; Lewis, N. S.J. Am. Chem. Soc.1986, 108, 4689-4695.
Rosenbluth, M. L.; Lewis, N. S.J. Phys. Chem.1989, 93, 3735-3740.
Rosenbluth, M. L.; Lieber, C. M.; Lewis, N. S.Appl. Phys. Lett.1984, 45, 423-425.
Gstrein, F.; Michalak, D. J.; Royea, W. J.; Lewis, N. S.J. Phys. Chem. B2002, 106, 2950-2961.
James R. Maiolo III, Brendan M. Kayes, Michael A. Filler, Morgan C. Putnam, Michael D. Kelzenberg, Harry A. Atwater, and Nathan S. Lewis, J. Am. Chem. Soc. 2007, 129, 12346-12347.
Kayes, B. M.; Richardson, C. E.; Lewis, N. S.; Atwater, H. A.IEEE Photo. Spec. Conf.2005, 55-58.
McCandless, B., and Sites, J. Cadmium Telluride Solar Cells. InHandbook of Photovoltaic Science and Engineering,2003; pp. 617-657.
Jenny, D.; Bube, R.Phys. Rev.1954, 96, 1190-1191.
Harris, L. A.; Wilson, R. H.Adv. Rev. Mater. Sci.1978, 8, 99-134.
Basol, B.J. Appl. Phys.1984, 55, 601-603.
Fulop, G., et al.Appl. Phys. Lett.1982, 40, 327-328.
Bhattacharya, R.; Rajeshwar, K.J. Electrochem. Soc.1984, 131, 2032-2041.
Paulson, P. D.; Mathew, X.Sol. Energy Mater. Sol. Cells2004, 82, 279-290.
Lepiller, C.; Lincot, D.J. Electrochem. Soc.2004, 151, C348-C357.
Kressin, A.; Doan, V.; Klein, J.; Sailor, M.Chem. Mater.1991, 3, 1015-1020.
Basol, B.Conf. Rec. IEEE Photo. Spec. Conf.1990, 588-594.
Klein, J.; Herrick, R.; Palmer, D.; Sailor, M.; Brumlik, C.; Martin, C.Chem. Mater.1993, 5, 902-904.
Basol, B.; Tseng, E.; Rod, R.Conf. Rec. IEEE Photo. Spec. Conf.1982, 805-808.
Xia, Y., et al.Adv. Mater.2003, 15, 353-389.
Law, M.; Goldberger, J.; Yang, P.Annu. Rev. Mater. Res.2004, 34, 83-122.
Gu, Y.; Romankiewicz, J.; David, J.; Lensch, J.; Lauhon, L.Nano Lett.2006, 6, 948-952.
Yu, J.; Chung, S.; Heath, J.J. Phys. Chem. B2000, 104, 11864-11870.
Haick, H.; Hurley, P.; Hochbaum, A.; Yang, P.; Lewis, N.J. Am. Chem. Soc.2006, 128, 8990-8991.
Lauhon, L.; Gudiksen, M.; Wang, D.; Lieber, C.Nature2002, 420, 57-61.
Shimizu, T.; Xie, T.; Nishikawa, J.; Shingubara, S.; Senz, S.; Gosele, U.Adv. Mater.2007, 19, 917-920.
Erts, D., et al.J. Phys. Chem. B2006, 110, 820-826.
Mohan, P.; Motohisa, J.; Fukui, T.Nanotech.2005, 16, 2903-2907.
Fan, H., et al.J. Cryst. Growth2006, 287, 34-38.
Routkevitch, D.; Bigioni, T.; Moskovits, M.; Xu, J. M.J. Phys. Chem.1996, 100, 14037-14047.
Yoonmook, K.; Park, N.; Kim, D.Appl. Phys. Lett.2005, 86, 113101-1 to 113101-3.
James R. Maiolo, III, Harry A. Atwater, and Nathan S. Lewis, J. Phys. Chem. 112, 6194-6201, 2008.
James R. Maiolo III, Brendan M. Kayes, Michael A. Filler, Morgan C. Putnam, Michael D. Kelzenberg, Harry A. Atwater, and Nathan S. Lewis, J. Am. Chem. Soc. 2007, 129, 12346-12347.
Z. Huang, H. Feng, and J. Zhu, Adv. Mater. (Weinheim, Ger.) 19, 744 (2007).
R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 4, 89 (1964).
T. Martensson, M. Borgstrom, W. Seifert, B. J. Ohlsson, and L. Samuelson, Nanotechnology 14, 1255 (2003).
J. Westwater, D. P. Gosain, and S. Usui, Jpn. J. Appl. Phys., Part 1 36, 6204 (1997).
T. Kawano, Y. Kato, M. Futagawa, H. Takao, K. Sawada, and M. Ishida, Sens. Actuators, A 97, 709 (2002).
B. M. Kayes, J. M. Spurgeon, T. C. Sadler, N. S. Lewis, and H. A. Atwater, Proceedings of the Fourth IEEE WCPEC, 2006, vol. 1, p. 221.
T. Shimizu, T. Xie, J. Nishikawa, S. Shingybara, S. Senz, and U. Gosele, Adv. Mater. (Weinheim, Ger.) 19, 917 (2007).
B. M. Kayes, N. S. Lewis, and H. A. Atwater, J. Appl. Phys. 97, 114302 2005.
M. J. A. de Dood, Ph.D. thesis, Utrecht University, 2002.
H. J. Fan, P. Werner, and M. Zacharias, Small 2, 700, 2006.
E. I. Givargizov,Highly Anisotropic crystals—D. Reidel, Dordrecht

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