Method for replacing defects in a memory and apparatus thereof

Details Method for replacing defects in a memory and apparatus thereof Method for replacing defects in a memory and apparatus thereof

2007-01-30

2007-01-30

Mai, Son L. (Department: 2827)

Static information storage and retrieval

Read/write circuit

Bad bit

C365S201000

Reexamination Certificate

active

10612300

ABSTRACT:
A method and an apparatus for restoring defective memory cells are provided. The apparatus includes memory, a memory scan controller, which scans the memory to see if the memory is defective when a system starts operating and transmits resulting defect information to a memory controller, and the memory controller, which converts an external address applied from a system controller into an internal address for accessing the memory and replaces a defective cell in the memory with spare memory provided therein so that when a request for access to the defective cell is issued by the system controller, spare memory, rather than the defective cell, can be accessed by the system controller.

REFERENCES:
patent: 4475194 (1984-10-01), LaVallee et al.
patent: 4654847 (1987-03-01), Dutton
patent: 4942556 (1990-07-01), Sasaki et al.
patent: 5987635 (1999-11-01), Kishi et al.
patent: 6097644 (2000-08-01), Shirley
patent: 6119251 (2000-09-01), Cloud et al.
patent: 6295237 (2001-09-01), Pochmuller
patent: 6421283 (2002-07-01), Walley et al.
patent: 6731550 (2004-05-01), McClure
patent: 6825682 (2004-11-01), Kantz et al.
patent: 6914846 (2005-07-01), Harari et al.
patent: 2000-305858 (2000-11-01), None

Affiliated with

Also associated with

Rating

Method for replacing defects in a memory and apparatus thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for replacing defects in a memory and apparatus thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for replacing defects in a memory and apparatus thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3767101