Method for repairing semiconductor masks and reticles

Details Method for repairing semiconductor masks and reticles Method for repairing semiconductor masks and reticles

1989-12-18

1991-07-30

Nguyen, Nam X.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429836, 2504923, C23F 102

Patent

active

050357875

ABSTRACT:
Apparatus and method for repairing semiconductor masks and reticles is disclosed, utilizing a focused ion beam system capable of delivering, from a single ion beam column, several different species of focused ion beams, each of which is individually optimized to meet the differing requirements of the major functions to be performed in mask repair. This method allows the mask to be imaged with high resolution and minimum mask damage. Opaque defects are removed by sputter etching at high rates with minimum damage to the mask substrate, and clear defects are filled in at high rates directly from the beam by deposition of a metallic or other substance compatible with the mask materials. A focused ion beam column able to produce precisely focused ion beams is employed and is operated at high energies for imaging and sputter etching, and at low energies for imaging and deposition. A liquid metal alloy source containing suitable atomic species is employed.

REFERENCES:
patent: 4367429 (1983-01-01), Wang et al.
patent: 4503329 (1985-03-01), Yamaguchi et al.
patent: 4548883 (1985-10-01), Wagner
patent: 4556798 (1985-12-01), McKenna et al.
patent: 4641034 (1987-02-01), Okamura et al.

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