Method for removing thin, organic materials from semiconductor d

Details Method for removing thin, organic materials from semiconductor d Method for removing thin, organic materials from semiconductor d

1997-12-22

1999-11-23

Warden, Jill

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 13, 134 3, C03C 2300, C03C 102, B08B 700

Patent

active

059893540

ABSTRACT:
The invention is a method for removing organic and other contaminants, such as photo-resist, from semi-conductor dies and micro-lenses by placing the dies in a solution of two parts ethylene, diamine tetra-acetic-acid (EDTA) to one part peroxide at a temperature of between 30.degree. and 55.degree. C., and preferably between 40.degree. and 44.degree. C., for a period of 1-30 minutes, and preferably between 2 and 10 minutes.

REFERENCES:
patent: 4011144 (1977-03-01), Bachman
patent: 4880601 (1989-11-01), Andermann et al.
patent: 5110765 (1992-05-01), Bilakanti et al.
patent: 5462638 (1995-10-01), Datta et al.
patent: 5466389 (1995-11-01), Iiardi et al.
patent: 5491091 (1996-02-01), Loshaek et al.
CA abstract of JP 62-245526, Oct. 1987.

Affiliated with

Also associated with

Rating

Method for removing thin, organic materials from semiconductor d does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for removing thin, organic materials from semiconductor d, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for removing thin, organic materials from semiconductor d will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1216812