Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
Patent
1996-10-21
2000-01-04
Chaudhari, Chandra
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
438297, 438443, H01L 2130
Patent
active
060109491
ABSTRACT:
A method for use in the fabrication of semiconductor devices in accordance with the present invention includes providing a silicon nitride region and oxidizing a region of material in proximity to the silicon nitride region. The silicon nitride region is then hydrogenated and thereafter, the hydrogenated silicon nitride region is removed. The hydrogenation step may include immersing the silicon nitride region into pressurized boiling water and/or treating the silicon nitride region with pressurized water vapor and the removing step includes removing the hydrogenated silicon nitride region with hot phosphoric acid. The method may be used in a local oxidation of silicon process. Further, the oxidation of the material and the hydrogenation of the silicon nitride may be performed in the same pressurizable unit.
REFERENCES:
patent: 4293590 (1981-10-01), Takagi et al.
patent: 4296146 (1981-10-01), Penn
patent: 4855952 (1989-08-01), Kiyosumi
patent: 4861424 (1989-08-01), Fujimura et al.
patent: 5037506 (1991-08-01), Gupta et al.
patent: 5298112 (1994-03-01), Hayasaka et al.
patent: 5369061 (1994-11-01), Nagayama
patent: 5371035 (1994-12-01), Pfiester et al.
patent: 5403436 (1995-04-01), Fujimura et al.
patent: 5817581 (1998-12-01), Bayer et al.
Wolf et al., Silicon Processing for the VISI Era, vol. 1, pp. 216-218 and 221-222, 1986.
K. Hirose et al., "Ion-Implanted Photoresist and Damage-Free Stripping", J. Electrochem. Soc., 141 192-205 (1994).
Y. Ohmura et al., "Enhanced hydrogena and acceptor passivation in Si by pressurized water boiling", Appl. Phys. Lett., 67 64-66 (1995).
A.L.P. Rotondaro et al., "A Semi-Quantitative Method for Studying Photoresist Stripping", 6 pps. [Abstract].
Hawthorne Elvia M.
Hawthorne Richard C.
Li Li
Wu Zhiqiang
Chaudhari Chandra
Hawranek Scot J.
Micro)n Technology, Inc.
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