Method for removing semiconductor layers from salt substrates

Details Method for removing semiconductor layers from salt substrates Method for removing semiconductor layers from salt substrates

1982-11-12

1985-08-27

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

427 86, C30B 2512

Patent

active

045376514

ABSTRACT:
A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.

REFERENCES:
patent: 3158511 (1964-11-01), Robillard
patent: 3186880 (1965-06-01), Skaggs et al.
patent: 3993533 (1976-11-01), Milnes et al.
patent: 4116751 (1978-09-01), Zaromb
patent: 4255208 (1981-03-01), Deutscher et al.

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