Method for removing resist pattern and method for...

Details Method for removing resist pattern and method for... Method for removing resist pattern and method for...

2011-01-25

2011-01-25

Davis, Daborah Chacko (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Removal of imaged layers

C430S318000, C430S328000, C430S326000, C430S313000, C430S165000

Reexamination Certificate

active

07875419

ABSTRACT:
It is an object to provide a technique for removing a resist favorably without leaving residue in the case of using a nonaqueous resist stripper. According to the present invention, in order to achieve the object, when a resist pattern is removed by using the nonaqueous resist stripper, it becomes easier to remove the resist pattern after dry etching or ion doping, by performing exposure treatment on the resist pattern. After a resist pattern is formed from a DNQ-novolac resin type of positive resist composition, the resist pattern is irradiated with light within the range of photosensitive wavelength of the DNQ photosensitizer, thereby removing the resist pattern with the nonaqueous resist stripper.

REFERENCES:
patent: 4646424 (1987-03-01), Parks et al.
patent: 4673808 (1987-06-01), Katohno et al.
patent: 4692205 (1987-09-01), Sachdev et al.
patent: 4745042 (1988-05-01), Sasago et al.
patent: 4816115 (1989-03-01), Horner et al.
patent: 5129991 (1992-07-01), Gilton
patent: 5252427 (1993-10-01), Bauer et al.
patent: 5506168 (1996-04-01), Morita et al.
patent: 6009888 (2000-01-01), Ye et al.
patent: 6057081 (2000-05-01), Yunogami et al.
patent: 6207247 (2001-03-01), Morita
patent: 6285433 (2001-09-01), Kawasaki
patent: 6423477 (2002-07-01), Engelen et al.
patent: 6432620 (2002-08-01), Arao
patent: 6497992 (2002-12-01), Yunogami et al.
patent: 6524936 (2003-02-01), Hallock et al.
patent: 6645851 (2003-11-01), Ho et al.
patent: 6734120 (2004-05-01), Berry et al.
patent: 6746965 (2004-06-01), Uehara et al.
patent: 7344825 (2008-03-01), Nagai et al.
patent: 2001/0052950 (2001-12-01), Yamazaki et al.
patent: 2002/0000551 (2002-01-01), Yamazaki et al.
patent: 2002/0127887 (2002-09-01), Uehara et al.
patent: 2002/0151156 (2002-10-01), Hallock et al.
patent: 2003/0228740 (2003-12-01), Nagai et al.
patent: 2004/0224514 (2004-11-01), Uehara et al.
patent: 2008/0182209 (2008-07-01), Nagai et al.
patent: 0 314 185 (1989-05-01), None
patent: 0 409 543 (1991-01-01), None
patent: 1 032 026 (2000-08-01), None
patent: 61-086748 (1986-05-01), None
patent: 01-094342 (1989-04-01), None
patent: 02-084656 (1990-03-01), None
patent: 02-132448 (1990-05-01), None
patent: 02-166718 (1990-06-01), None
patent: 03-053587 (1991-03-01), None
patent: 03-192792 (1991-08-01), None
patent: 10-003169 (1998-01-01), None
patent: 11-176812 (1999-07-01), None
patent: 2000-241992 (2000-09-01), None
patent: 2001-216690 (2001-08-01), None
patent: 2002-033273 (2002-01-01), None
patent: 2004-006788 (2004-01-01), None
patent: 2004-517475 (2004-06-01), None
patent: 02/052349 (2002-07-01), None
Hatano et al., “A Novel Self-aligned Gate-overlapped LDD Poly-Si TFT with High Reliability and Performance”, IEDM 97; Technical Digest of International Electron Devices Meeting, Dec. 7, 1997, pp. 523-526.
Final Office Action dated Dec. 6, 2005 for U.S. Appl. No. 10/405,908.
Non-final Office Action dated Jun. 13, 2006 for U.S. Appl. No. 10/405,908.
U.S. Appl. No. 10/405,908, filed Apr. 3, 2003, Masaharu Nagai et al.

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