Method for removing residual material from a cavity during the m

Details Method for removing residual material from a cavity during the m Method for removing residual material from a cavity during the m

1989-12-20

1991-05-21

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 1, 156646, 156651, 156657, 1566591, 156662, 20419237, 252 791, 437228, 437233, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

050172654

ABSTRACT:
A method for removing residual material which remains in a cavity after an anisotropic etching process in the manufacture of a partially completed multi-layer semiconductor device, where the cavity is in contact with at least one anisotropic etch-stop layer and is accessible by an etchable layer is disclosed. A plasma etching apparatus which includes a chamber is utilized. The etchable layer is first etched by anisotropic etching in the chamber under predetermined conditions in the plasma etching apparatus until a top of the etch-stop layer is exposed. A plasma scattering etching process is then performed to remove the residual material in the cavity by changing the predetermined conditions of the anisotropic etching process to produce plasma scattering, thereby removing the residual material from the cavity.

REFERENCES:
patent: 4341594 (1982-07-01), Carlson et al.
patent: 4502915 (1985-03-01), Carter et al.
patent: 4528066 (1985-07-01), Merkling et al.
patent: 4806199 (1989-02-01), Gualandris
patent: 4808259 (1989-02-01), Jillie et al.
patent: 4818334 (1989-04-01), Shwartzman et al.

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