Method for removing protuberances at the surface of a semiconduc

Details Method for removing protuberances at the surface of a semiconduc Method for removing protuberances at the surface of a semiconduc

1985-10-28

1987-06-09

Bashore, S. Leon

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156636, 156648, 156662, 156663, 29576W, 29580, 427 94, H01L 21302

Patent

active

046718516

ABSTRACT:
A chemical-mechanical (chem-mech) method for removing SiO.sub.2 protuberances at the surface of a silicon chip, such protuberances including "bird's heads". A thin etch stop layer of Si.sub.3 N.sub.4 is deposited onto the wafer surface, which is then chem-mech polished with a SiO.sub.2 water based slurry. The Si.sub.3 N.sub.4 acts as a polishing or etch stop barrier layer only on the planar portions of the wafer surface. The portions of the Si.sub.3 N.sub.4 layer located on the top and at the sidewalls of the "bird's heads" and the underlying SiO.sub.2 protuberances are removed to provide a substantially planar integrated structure.

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IBM Tech. Disc. Bull., vol. 25, No. 12, May 1983, "Preventing Formation of Polysilicon Rails", C. G. Jambotkar, pp. 6607-6609.

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