Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2006-10-02
2010-06-29
Olsen, Allan (Department: 1792)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C134S001100, C156S345330
Reexamination Certificate
active
07744771
ABSTRACT:
A method for removing a protective film from a surface of an article is provided. The protective film includes a primary protective layer (e.g., a diamond-like carbon layer) and a transition layer, the transition layer being formed directly upon the surface of the article and thereby facilitating an attachment/bond of the protective film to the article. The method includes the step of: disposing/placing the article having the protective film in a reaction chamber; bombarding the protective film (especially, the primary protective layer) with oxidative plasma beams along an edge portion of the protective film, the bombarding occurring until the transition layer in particular is exposed; and bombarding the transition layer with oxidative plasma beams to damage a configuration of the transition layer, thereby making it possible to remove the protective film.
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Chang Ching-Chou
Hsiao Bor-Yuan
Hon Hai Precision Industry Co. Ltd.
Knapp Jeffrey T.
Olsen Allan
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