Method for removing polymeric residue contamination on...

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

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C438S725000

Reexamination Certificate

active

06884728

ABSTRACT:
A method for improving a photolithographic patterning process to avoid undeveloped photoresist contamination in a semiconductor manufacturing process including providing a first semiconductor feature having an anisotropically etched opening including sidewalls. The first semiconductor feature further provide an overlying photoresist layer photolithographically patterned for anisotropically etching a second semiconductor feature opening overlying and encompassing the first semiconductor feature; blanket depositing a polymeric passivation layer over the overlying photoresist layer including covering at least a portion of the sidewalls including polymeric containing residues; and, removing the polymeric passivation layer including a substantial portion of the polymeric containing residues from at least a portion of the sidewalls prior to anisotropically etching the second semiconductor feature.

REFERENCES:
patent: 6114243 (2000-09-01), Gupta et al.
patent: 6440861 (2002-08-01), Liu et al.
patent: 6528428 (2003-03-01), Chen et al.
patent: 6720256 (2004-04-01), Wu et al.
patent: 6803318 (2004-10-01), Qiao et al.

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