Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2005-04-26
2005-04-26
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S725000
Reexamination Certificate
active
06884728
ABSTRACT:
A method for improving a photolithographic patterning process to avoid undeveloped photoresist contamination in a semiconductor manufacturing process including providing a first semiconductor feature having an anisotropically etched opening including sidewalls. The first semiconductor feature further provide an overlying photoresist layer photolithographically patterned for anisotropically etching a second semiconductor feature opening overlying and encompassing the first semiconductor feature; blanket depositing a polymeric passivation layer over the overlying photoresist layer including covering at least a portion of the sidewalls including polymeric containing residues; and, removing the polymeric passivation layer including a substantial portion of the polymeric containing residues from at least a portion of the sidewalls prior to anisotropically etching the second semiconductor feature.
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Chaio Li-Chih
Chen Hong-Ming
Chu Yin-Shen
Huang Jun-Lung
Huang Yi-Chen
Chen Kin-Chan
Taiwan Semiconductor Manufacturing Co. Ltd.
Tung & Associates
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