Method for removing photoresist

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

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Details

438710, 438733, H01L 21311

Patent

active

061072052

ABSTRACT:
A method for removing a photoresist. A substrate having a wire on the substrate and a flowable oxide layer over the substrate and a patterned photoresist over the flowable oxide layer is provided. A plasma etching step is performed by using an additional gas mixed with oxygen as a source to remove the photoresist layer.

REFERENCES:
patent: 5480048 (1996-01-01), Kitamura et al.
patent: 5897374 (1999-04-01), Lin
patent: 5899738 (1999-05-01), Wu et al.
patent: 5981354 (1999-11-01), Spikes et al.

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