Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Patent
1999-02-08
2000-08-22
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
438710, 438733, H01L 21311
Patent
active
061072052
ABSTRACT:
A method for removing a photoresist. A substrate having a wire on the substrate and a flowable oxide layer over the substrate and a patterned photoresist over the flowable oxide layer is provided. A plasma etching step is performed by using an additional gas mixed with oxygen as a source to remove the photoresist layer.
REFERENCES:
patent: 5480048 (1996-01-01), Kitamura et al.
patent: 5897374 (1999-04-01), Lin
patent: 5899738 (1999-05-01), Wu et al.
patent: 5981354 (1999-11-01), Spikes et al.
Huang Jiawei
Perez-Romos Vanessa
United Semiconductor Corp.
Utech Benjamin L.
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