Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...
Patent
1993-10-15
1996-01-02
Lieberman, Paul
Cleaning and liquid contact with solids
Processes
For metallic, siliceous, or calcareous basework, including...
134 13, 134 42, 1566431, C23G 500, B44C 122
Patent
active
054804922
ABSTRACT:
For removing an unnecessary substance on a silicon substrate surface, a temperature of the unnecessary substance on the silicon substrate surface is not less than 750.degree. C. when the unnecessary substance is exposed to a gas including ozone.
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Tetsuya Kaneko et al.; "Low Temperature Silicon Surface Cleaning by HF Etching/Ultraviolet Ozone Cleaning (HF/UVOC) Method (II)-in situ UVOC"; Japanese Journal of Applied Physics--vol. 28, No. 12, Dec. 1989, Tokyo JP pp. 2425-2429.
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J. K. Watanabe et al.; "Excimer Laser Cleaning and Processing of Si(100) Substrates in Ultrahigh Vacuum and Reactive Gases"; Journal of Vacuum Science and Technology: Part A.--vol. 10, No. 4, Aug. 1992, New York US pp. 823-828.
Yi Ma et al.; "Si/SiO.sub.2 Interfaces Formed by Remote Plasma-Enhanced Chemical Vapor Deposition of SiO.sub.2 on Plasma-Processed Si Substrates"; Journal of vacuum Science and Technology: Part A.-vol. 10, No. 04, Aug. 1992, New York US pp. 781-787.
R. E. Thomas et al.; "Carbon and Oxygen Removal from Silicon (100) Surfaces by Remote Plasma Cleaning Techniques"; Journal of Vacuum Science and Technology: Part A.-vol. 10, No. 04, Aug. 1992, New York US pp. 817-822.
Hirai Yoshihiko
Morimoto Kiyoshi
Niwa Masaaki
Okada Kenji
Udagawa Masaharu
Douyon Lorna M.
Lieberman Paul
Matsushita Electric - Industrial Co., Ltd.
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