Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1993-08-23
1995-01-03
Kunemund, Robert
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
H01L 21312
Patent
active
053783174
DESCRIPTION:
BRIEF SUMMARY
FIELD OF THE INVENTION
The present invention relates to a method for removing an organic film, and in particular to a method for removing a photo resist film, i.e. an organic macromolecular compound used in manufacture of semiconductor device by photolithography, without damaging the semiconductor device.
BACKGROUND ART
In a process for manufacturing a semiconductor device such as IC, LSI, etc., an organic photosensitive macromolecular compound is coated on a semiconductor substrate such as silicon or a glass substrate in order to form a fine electric element or circuit, and the compound is exposed to ionizing radiation such an ultraviolet ray through a photo mask where a pattern such as a predetermined circuit is formed. Then, the photo resist is developed, and a positive or negative circuit pattern is prepared on the photo resist on the substrate, and a film is formed on a substrate without the photo resist by CVD, sputtering, etc. Alternatively, chemical etching, RIE (reactive ion etching), diffusion by heating impurity element, or ion implantation are performed. After a series of processings are completed, the film of photo resist on the substrate is removed by chemical processing. In a process for manufacturing IC and LSI, after various processings by coating such photo resist, the photo resist film is removed not only by a single procedure but by several procedures.
To remove the photo resist film, various methods are adopted, and it is necessary to completely remove the photo resist film because the subsequent processes may be affected adversely if the removal of the photo resist is incomplete. Particularly, since the line width of a circuit of a semiconductor device to be formed is finer because of the introduction of higher integration of the semiconductor device in recent years, the influence of residue of the photo resist film becomes larger than is the case with lower integration, and it is necessary to remove it completely.
Various methods are employed for the removal of the photo resist film including a wet method using a chemical solution and a dry method using oxygen plasma.
In the wet method for removing photo resist film, sulfuric acid is normally used, and it is general practice to mix the acid with hydrogen peroxide to increase oxidizing ability of the sulfuric acid.
When the photo resist film is removed using a mixed solution of sulfuric acid and hydrogen peroxide, a chemical solution such as sulfuric acid attached on the film is removed after the removal of the photo resist film, and ultra pure water is used for removing and cleaning the residue.
As is shown in FIG. 1(A), to remove an organic film by a normal wet method, a plurality of wafers 2 with organic films 1 formed thereon are accommodated in a wafer cassette 3, and this is immersed for a certain period time in a processing tank 5 filled with a processing solution 4 such as a mixed solution of sulfuric acid and hydrogen peroxide. Then, the wafer cassette 3 is immersed in a rinse tank 6 with ultra pure water to remove any chemical solution attached on the substrate or residue of the photo resist film. There are many types of rinse tanks, while an overflow type tank is widely used and the rinse tank is provided with an ultra pure water inlet 7 and an outlet 8 for the solution.
In the removal of the photo resist film by the mixed solution of sulfuric acid and hydrogen peroxide, oxidizing decomposition of the photo resist film by oxygen generated through decomposition of hydrogen peroxide plays an important role. To maintain the oxidizing ability of this mxied solution, it is necessary to replenish a new solution by removing sulfuric acid and hydrogen peroxide, which have been consumed by oxidizing decomposition of the photo resist film and have decreased concentration.
A method has been proposed in the Japanese Patent Publication No. 52-12063, by which ozone is supplied to sulfuric acid to remove the photo resist film in order to obtain the same effect without processing of waste solution with its removing ability or without t
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Kashiwase Masaharu
Matsuoka Terumi
Chlorine Engineers Corp. Ltd.
Fleck Linda J.
Kunemund Robert
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