Method for removing crevices induced by chemical-mechanical poli

Details Method for removing crevices induced by chemical-mechanical poli Method for removing crevices induced by chemical-mechanical poli

1996-10-11

1999-10-12

Mach, D. Margaret M.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438693, 438694, 438959, H01L 2100, H01L 2170

Patent

active

059654597

ABSTRACT:
A planarizing method involves a first polishing step in which a relatively hard, low compressibility pad removes excess material of a first layer and planarizes the first layer. Deep defects emanating from the polishing surface formed during the first polishing step are then enlarged and filled with a second layer. After filling, and optionally annealing, the second layer is planarized by polishing with a relatively soft and high compressibility pad or by anisotropic etching.

REFERENCES:
patent: 5300813 (1994-04-01), Joshi et al.
patent: 5302233 (1994-04-01), Kim et al.
patent: 5312512 (1994-05-01), Allman et al.
patent: 5403779 (1995-04-01), Joshi et al.
patent: 5426330 (1995-06-01), Joshi et al.
patent: 5514245 (1996-05-01), Doan et al.
patent: 5516729 (1996-05-01), Dawson et al.

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