Method for removing contaminants from silicon wafer surface

Details Method for removing contaminants from silicon wafer surface Method for removing contaminants from silicon wafer surface

2007-05-24

2009-08-25

Cleveland, Michael (Department: 1792)

Cleaning and liquid contact with solids

Processes

Using sequentially applied treating agents

C134S001000, C134S001300, C134S002000, C134S034000

Reexamination Certificate

active

07578890

ABSTRACT:
Taught is a method of removal surface contaminants, including organic contaminants, metal ions and solid particles, from silicon wafer surface comprising the following steps: (a) submerging the silicon wafer surface in an aqueous cleaning agent solution through which current is passed using a boron-doped diamond film as an electrode; (b) submerging the silicon wafer surface in an aqueous cleaning agent solution; subjecting the silicon wafer to ultrasound waves; and, optionally, heating the solution; (c) submerging the silicon wafer surface in water through which current is passed using a boron-doped diamond film as an electrode; (d) submerging the silicon wafer surface in water with ultrasound and heating; (e) repeating step (d); and (f) spraying the silicon surface with water. The results obtained using the method according to this invention are far superior to those obtained with conventional methods. The technology is simple, convenient to operate, and environmentally friendly.

REFERENCES:
patent: 5676760 (1997-10-01), Aoki et al.
patent: 2002/0066717 (2002-06-01), Verhaverbeke et al.
patent: 2005/0224369 (2005-10-01), Nyman et al.
patent: 2006/0270573 (2006-11-01), Ikemoto et al.
patent: WO 2005076332 (2005-08-01), None
Daintith, John. The Fact on File Dictionary of Chemistry. 2005. Facts on File, 4thEdition, pp. 96-97.

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