Method for removing a thin film layer

Details Method for removing a thin film layer Method for removing a thin film layer

1995-06-02

1997-08-12

Vargot, Mathieu D.

Plastic and nonmetallic article shaping or treating: processes

Laser ablative shaping or piercing

21912161, 21912162, 21912169, 4251744, B23K 2608

Patent

active

056562292

ABSTRACT:
A method and apparatus whereby a thin film layer, e.g., a resist covering at least selected patterns formed on a surface of a substrate, e.g., a wafer is removed from a limited localized portion at a predetermined position relative to each of the patterns, such as, an alignment mark portion of the pattern in response to the irradiation of an energy beam. The substrate is positioned on a turn table and the position of a selected portion of the pattern is detected on the turn table. In accordance with the detected position of the selected portion and design coordinate position information of the pattern, the position of the localized portion requiring removal of the thin film layer is determined by means of a polar coordinate system based on a center of rotation of the turn table so that in accordance with the determined polar coordinate values the energy beam is irradiated on the thin film layer of the localized portion.

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patent: 5359173 (1994-10-01), Opdyke
patent: 5455815 (1995-10-01), Ishida et al.

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