Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Patent
1997-10-22
2000-11-28
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
4236585, B01D 1100, H01L 2131
Patent
active
061535354
ABSTRACT:
A method for removing a thin film, which comprises applying a powder or solution of a salt to a thin film formed on a substrate, followed by heating to remove the thin film at the applied portion, wherein as the salt, a salt having some or all of hydrogen ions of an acid substituted by ammonium ions or alkali metal ions, is used.
REFERENCES:
patent: 3754881 (1973-08-01), Petticrew
patent: 3993835 (1976-11-01), Miedaner
patent: 4659512 (1987-04-01), Macedo et al.
patent: 5332531 (1994-07-01), Horwitz et al.
patent: 5587142 (1996-12-01), Horwitz et al.
Derwent abstract, Accession No. 96-049646 (& WO-A-95 34608).
PAJ-abstract of JP-A-7 331 180 (corresponding document of WO-A-95 03608).
Derwent Abstracts, AN 91-214016, SU 1 604 769, Nov. 7, 1990.
Patent Abstracts of Japan, vol. 15, No. 461 (C-0887), Nov. 22, 1991, JP 03 197335, Aug. 28, 1991.
Bunseki, 1994, 8, pp. 653-657.
Asahi Glass Company Ltd.
Deo Duy-Vu
Utech Benjamin L.
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