Method for removing a resist mask with high selectivity to a...

Details Method for removing a resist mask with high selectivity to a... Method for removing a resist mask with high selectivity to a...

2006-02-28

2006-02-28

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S710000

Reexamination Certificate

active

07005385

ABSTRACT:
The present invention relates to a method for removing a resist selective to a carbon hard mask including providing an etching plasma comprising of at least hydrogen at a predetermined temperature level and a predetermined pressure level in a reaction chamber, and etching the resist selectively to the mask with said plasma for a predetermined period of time.

REFERENCES:
patent: 6030901 (2000-02-01), Hopper et al.
patent: 6492272 (2002-12-01), Okada et al.
patent: 6562700 (2003-05-01), Gu et al.
patent: 6630406 (2003-10-01), Waldfried et al.
patent: 2004/0144491 (2004-07-01), Ohuchi
patent: 55-87438 (1980-07-01), None
K. R. Williams et al., “Etch Rates for Micromachining Processing—Part II” Dec. 2003, vol. 12, Issue 6, pp. 761-778.

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