Method for removing a film on a silicon layer surface

Details Method for removing a film on a silicon layer surface Method for removing a film on a silicon layer surface

1990-07-24

1991-06-11

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 3, 156657, 156662, 156345, B44C 122, C03C 1500, C03C 2506

Patent

active

050229613

ABSTRACT:
A method for removing a film on a silicon layer formed on a surface of a substrate includes the steps of: (a) placing a substrate in a reaction chamber to be isolated hermetically from the outside air, and (b) feeding anhydrous hydrogen fluoride and alcohol simultaneously into the reaction chamber. Preferably, the method further includes the step of feeding only alcohol into the reaction chamber prior to and/or subsequent to the step (b). An alcohol layer is formed on the substrate surface, whereby the film can be removed uniformly by anhydrous hydrogen fluoride. A by-product of the reaction is taken out from the system of reaction by means of the alcohol on the substrate. No by-product remains on the substrate after the reaction. Since the silicon layer after the reaction is covered with alcohol, re-growth of a native oxide film thereon is also suppressed and on ionic contamination such as fluorine remains on the substrate surface.

REFERENCES:
patent: 4264374 (1981-04-01), Beyer et al.
patent: 4746397 (1988-05-01), Maeda et al.
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 4871416 (1989-10-01), Fukuda
patent: 4904338 (1990-02-01), Kozicki

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