Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2007-01-02
2007-01-02
Norton, Nadine (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
C438S184000, C438S197000, C438S199000, C438S224000, C438S231000, C438S301000, C438S558000, C257S019000, C257S020000, C257S024000, C257S336000, C257S382000, C257S400000, C257S900000
Reexamination Certificate
active
10876544
ABSTRACT:
A method of removing the cap from a gate of an embedded SiGe semiconductor device includes the formation of the embedded SiGe semiconductor device with the cap consisting of a cap material on top of the gate, first sidewall spacers on side surfaces of the gate, and embedded SiGe in source and drain regions. Second sidewall spacers are formed on the first sidewall spacers, these second sidewall spacers consisting of a material different from the cap material. The cap is stripped from the top of the gate with an etchant that selectively etches the cap material and not the second sidewall spacer material.
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Waite Andrew M.
Zhong Huicai
Advanced Micro Devices , Inc.
Angadi Maki
Norton Nadine
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